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Flash Type 3D-NAND 3D-NAND 3D-NAND 3D-NAND 3D-NAND 3D-NAND aSLC Mode 3D-NAND aSLC Mode
Flash Process Kioxia BiCS5 112L Kioxia BiCS5 112L BiCS5 112L Kioxia BiCS5 112L Kioxia BiCS5 112L Kioxia BiCS5 112L Kioxia BiCS5 112L
Series HERMES-PA HERCULES-PA PHANES-V PHANES-X PHANES-X PHANES-X PHANES-X
Picture
Capacity 128GB~2TB 128GB~1TB 480GB~3,840GB 128GB~1TB 128GB~2TB 32GB~256GB 32GB~512GB
Form-Factor M.2 2242-D2-M
M.2 2280-D2-M		 M.2 2242-D2-M
M.2 2280-D2-M		 M.2 2280-D2-M M.2 2230-D2-M M.2 2280-S2-M M.2 2230-D2-M M.2 2280-S2-M
Compatibility NVM ExpressTM 1.4 Standard & PCI Express® Base Specification Rev 3.1 NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0 NVM ExpressTM 1.4 Standard & PCI Express® Base Specification Rev 4.0 NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0 NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0 NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0 NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0
Data transfer rate PCI Gen3 x 4 NVMe interface PCI Gen3 x 4 NVMe interface PCI Gen4 x 4 NVMe interface PCI Gen3 x 4 NVMe interface PCI Gen3 x 4 NVMe interface PCI Gen3 x 4 NVMe interface PCI Gen3 x 4 NVMe interface
Sequential R/W (Max.) Read: 3,530 MB/sec
Write: 2,840 MB/sec		 Read: 2,600 MB/sec
Write: 1,750 MB/sec		 Read: 7,200 MB/sec
Write: 1,200 MB/sec		 Read: 2,450 MB/sec
Write: 1,750 MB/sec		 Read: 2,100 MB/sec
Write: 1,800 MB/sec		 Read: 2,400 MB/sec
Write: 1,750 MB/sec		 Read: 2,450 MB/sec
Write: 1,900 MB/sec
4K Random R/W IOPS.(Max.) Read: 534,000 IOPS.
Write: 337,000 IOPS.		 Read: 231,000 IOPS.
Write: 299,000 IOPS.		 Read: 580,000 IOPS.
Write: 200,000 IOPS.		 Read: 200,000 IOPS.
Write: 400,000 IOPS.		 Read: 270,000 IOPS.
Write: 420,000 IOPS.		 Read: 220,000 IOPS.
Write: 390,000 IOPS.		 Read: 250,000 IOPS.
Write: 420,000 IOPS.
Operating temp. (STD/IND or WIDE) S : 0˚C~+70˚C/
W : -40˚C~+85˚C		 S : 0˚C~+70˚C/
W : -40˚C~+85˚C		 S : 0˚C~+70˚C/
W : -40˚C~+85˚C		 S : 0˚C~+70˚C/
W : -40˚C~+85˚C		 S : 0˚C~+70˚C/
W : -40˚C~+85˚C		 S : 0˚C~+70˚C/
W : -40˚C~+85˚C		 S : 0˚C~+70˚C/
W : -40˚C~+85˚C
Power requirement +3.3 V ± 5% +3.3 V ± 5% +3.3 V ± 5% +3.3 V ± 5% +3.3 V ± 5% +3.3 V ± 5% +3.3 V ± 5%
Wear-leveling Static and Dynamic Static and Dynamic Static and Dynamic Static and Dynamic Static and Dynamic Static and Dynamic Static and Dynamic
TBW Up to 3,080 TBW at 2TB
JESD 219A Workload		 Up to 1,300 TBW at 1TB
JESD 219A Workload		 Up to 6,800 TBW at 3,840GB
JESD 219A Workload		 Up to 1,120 TBW at 1TB
JESD 219A Workload		 Up to 2,400 TBW at 2TB
JESD 219A Workload		 Up to 10,000 TBW at 256GB
JESD 219A Workload		 Up to 8,000 TBW at 512GB
JESD 219A Workload
Erase counts 3,000 3,000 3,000 3,000 3,000 30,000 30,000
Weight (Max.) 2242: 4.5g
2280: 8.0g		 2242: 4.5g
2280: 8.0g		 2280: 10g 2230: 8g 2280: 10g 2230: 8g 2280: 10g
Dimension (WxLxH,mm) 2242: 22.00 x 42.00
2280: 22.00 x 80.00		 2242: 22.00 x 42.00
2280: 22.00 x 80.00		 2280: 22.00 x 80.00 2230: 22.00 x 30.00 2280: 22.00 x 80.00 2230: 22.00 x 30.00 2280: 22.00 x 80.00
Conformal coating Optional Optional Optional Optional Optional Optional Optional
Warranty (Std./Ind.) 2 years or within 3,000 erasing counts 2 years or within 3,000 erasing counts 2 years or within 3,000 erasing counts 2 years or within 3,000 erasing counts 2 years or within 3,000 erasing counts 2 years or within 30,000 erasing counts 2 years or within 30,000 erasing counts
Flash Type 3D-NAND 3D-NAND 3D-NAND 3D-NAND 3D-NAND
Flash Process Kioxia BiCS5 112L Kioxia BiCS5 112L BiCS5 112L Kioxia BiCS5 112L Kioxia BiCS5 112L
Series HERMES-PA HERCULES-PA PHANES-V PHANES-X PHANES-X
Picture
Capacity 128GB~2TB 128GB~1TB 480GB~3,840GB 128GB~1TB 128GB~2TB
Form-Factor M.2 2242-D2-M
M.2 2280-D2-M		 M.2 2242-D2-M
M.2 2280-D2-M		 M.2 2280-D2-M M.2 2230-D2-M M.2 2280-S2-M
Compatibility NVM ExpressTM 1.4 Standard & PCI Express® Base Specification Rev 3.1 NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0 NVM ExpressTM 1.4 Standard & PCI Express® Base Specification Rev 4.0 NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0 NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0
Data transfer rate PCI Gen3 x 4 NVMe interface PCI Gen3 x 4 NVMe interface PCI Gen4 x 4 NVMe interface PCI Gen3 x 4 NVMe interface PCI Gen3 x 4 NVMe interface
Sequential R/W (Max.) Read: 3,530 MB/sec
Write: 2,840 MB/sec		 Read: 2,600 MB/sec
Write: 1,750 MB/sec		 Read: 7,200 MB/sec
Write: 1,200 MB/sec		 Read: 2,450 MB/sec
Write: 1,750 MB/sec		 Read: 2,100 MB/sec
Write: 1,800 MB/sec
4K Random R/W IOPS.(Max.) Read: 534,000 IOPS.
Write: 337,000 IOPS.		 Read: 231,000 IOPS.
Write: 299,000 IOPS.		 Read: 580,000 IOPS.
Write: 200,000 IOPS.		 Read: 200,000 IOPS.
Write: 400,000 IOPS.		 Read: 270,000 IOPS.
Write: 420,000 IOPS.
Operating temp. (STD/IND or WIDE) S : 0˚C~+70˚C/
W : -40˚C~+85˚C		 S : 0˚C~+70˚C/
W : -40˚C~+85˚C		 S : 0˚C~+70˚C/
W : -40˚C~+85˚C		 S : 0˚C~+70˚C/
W : -40˚C~+85˚C		 S : 0˚C~+70˚C/
W : -40˚C~+85˚C
Power requirement +3.3 V ± 5% +3.3 V ± 5% +3.3 V ± 5% +3.3 V ± 5% +3.3 V ± 5%
Wear-leveling Static and Dynamic Static and Dynamic Static and Dynamic Static and Dynamic Static and Dynamic
TBW Up to 3,080 TBW at 2TB
JESD 219A Workload		 Up to 1,300 TBW at 1TB
JESD 219A Workload		 Up to 6,800 TBW at 3,840GB
JESD 219A Workload		 Up to 1,120 TBW at 1TB
JESD 219A Workload		 Up to 2,400 TBW at 2TB
JESD 219A Workload
Erase counts 3,000 3,000 3,000 3,000 3,000
Weight (Max.) 2242: 4.5g
2280: 8.0g		 2242: 4.5g
2280: 8.0g		 2280: 10g 2230: 8g 2280: 10g
Dimension (WxLxH,mm) 2242: 22.00 x 42.00
2280: 22.00 x 80.00		 2242: 22.00 x 42.00
2280: 22.00 x 80.00		 2280: 22.00 x 80.00 2230: 22.00 x 30.00 2280: 22.00 x 80.00
Conformal coating Optional Optional Optional Optional Optional
Warranty (Std./Ind.) 2 years or within 3,000 erasing counts 2 years or within 3,000 erasing counts 2 years or within 3,000 erasing counts 2 years or within 3,000 erasing counts 2 years or within 3,000 erasing counts
Flash Type 3D-NAND aSLC Mode 3D-NAND aSLC Mode
Flash Process Kioxia BiCS5 112L Kioxia BiCS5 112L
Series PHANES-X PHANES-X
Picture
Capacity 32GB~256GB 32GB~512GB
Form-Factor M.2 2230-D2-M M.2 2280-S2-M
Compatibility NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0 NVM ExpressTM 1.3 Standard & PCI Express® Base Specification Rev 3.0
Data transfer rate PCI Gen3 x 4 NVMe interface
Sequential R/W (Max.) Read: 2,400 MB/sec
Write: 1,750 MB/sec		 Read: 2,450 MB/sec
Write: 1,900 MB/sec
4K Random R/W IOPS.(Max.) Read: 220,000 IOPS.
Write: 390,000 IOPS.		 Read: 250,000 IOPS.
Write: 420,000 IOPS.
Operating temp. (STD/IND or WIDE) S : 0˚C~+70˚C/
W : -40˚C~+85˚C		 S : 0˚C~+70˚C/
W : -40˚C~+85˚C
Power requirement +3.3 V ± 5% +3.3 V ± 5%
Wear-leveling Static and Dynamic Static and Dynamic
TBW Up to 10,000 TBW at 256GB
JESD 219A Workload		 Up to 8,000 TBW at 512GB
JESD 219A Workload
Erase counts 30,000 30,000
Weight (Max.) 2280: 8g 2280: 10g
Dimension (WxLxH,mm) 2280: 22.00 x 30.00 2280: 22.00 x 80.00
Conformal coating Optional Optional
Warranty (Std./Ind.) 2 years or within 30,000 erasing counts 2 years or within 30,000 erasing counts
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